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ALD1108EPCL
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ALD1108EPCL

Advanced Linear Devices Inc.
ALD1108EPCL
MOSFET 4N-CH 10V 16DIP
16-DIP (0.300", 7.62mm)
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ALD1108EPCL
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ALD1108EPCL Attributes (17)
TYPEDESCRIPTIONSELECT
Configuration4 N-Channel, Matched Pair
Current - Continuous Drain (Id) @ 25°C-
Drain to Source Voltage (Vdss)10V
FET Feature-
Gate Charge (Qg) (Max) @ Vgs-
Grade-
Input Capacitance (Ciss) (Max) @ Vds25pF @ 5V
Mounting TypeThrough Hole
Operating Temperature0°C ~ 70°C (TJ)
Package / Case16-DIP (0.300", 7.62mm)
Power - Max600mW
Qualification-
Rds On (Max) @ Id, Vgs500Ohm @ 5V
SeriesEPAD®
Supplier Device Package16-PDIP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.01V @ 1µA
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