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AOD7N60M
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AOD7N60M

Alpha & Omega Semiconductor Inc.
AOD7N60M
MOSFET
TO-252-3, DPak (2 Leads + Tab), SC-63
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AOD7N60M
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AOD7N60M Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds1170 pF @ 25 V
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max)178W (Tc)
Qualification-
Rds On (Max) @ Id, Vgs1.3Ohm @ 3.5A, 10V
Series-
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA
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