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GPI65007DF88
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GPI65007DF88

GaNPower
GPI65007DF88
GaNFET N-CH 650V 7A DFN8x8
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Active
GPI65007DF88
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GPI65007DF88 Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C7A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)6V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 6 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 500 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case-
Power Dissipation (Max)-
Qualification-
Rds On (Max) @ Id, Vgs-
Series-
Supplier Device Package-
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+7.5V, -12V
Vgs(th) (Max) @ Id1.5V @ 3.5mA
Price Available
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $1.94
Total Price: $1.94
This price is for reference only, please contact us for now price support@aoxiic.com.
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