AoXi Technology Co., Limited | CR No. 2830142 | support@aoxiic.com
GPIHV10DK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GPIHV10DK

GaNPower
GPIHV10DK
GaNFET N-CH 1200V 10A TO252
-
Active
GPIHV10DK
Payment Methods: paypal visa mastercard westernunion unionpay
Shipping Methods: DHL TNT FEDEX UPS SF
GPIHV10DK Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C10A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)6V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 6 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds105 pF @ 700 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case-
Power Dissipation (Max)-
Qualification-
Rds On (Max) @ Id, Vgs-
Series-
Supplier Device Package-
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+7.5V, -12V
Vgs(th) (Max) @ Id1.7V @ 3.5mA
Price Available
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $3.68
Total Price: $3.68
This price is for reference only, please contact us for now price support@aoxiic.com.
Quick Inquiry
100,000+
Total Number Of Customers
3,000,000+
Stock Inventory
1200+
Worldwide Manufacturers
500,000+
Locally Available Stock