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GE12050EEA3
GE Aerospace
GE12050EEA3
1200V 475A 6-Pack SiC Module
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GE12050EEA3 Attributes (15)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Configuration | 6 N-Channel (3-Phase Bridge) | |
| Current - Continuous Drain (Id) @ 25°C | 475A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| FET Feature | - | |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V | |
| Mounting Type | Chassis Mount | |
| Operating Temperature | -55°C ~ 150°C (Tc) | |
| Package / Case | Module | |
| Power - Max | 1250W (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V | |
| Series | SiC Power | |
| Supplier Device Package | - | |
| Technology | Silicon Carbide (SiC) | |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
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Unit Price: $1583.19
Total Price: $1583.19
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