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HUF75333P3
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HUF75333P3

Harris Corporation
HUF75333P3
MOSFET N-CH 55V 66A TO220-3
TO-220-3
Active
HUF75333P3
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HUF75333P3 Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)-
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 20 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Package / CaseTO-220-3
Power Dissipation (Max)150W (Tc)
Qualification-
Rds On (Max) @ Id, Vgs16mOhm @ 66A, 10V
SeriesUltraFET™
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA
Price Available
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Unit Price: $0.40
Total Price: $0.40
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