AoXi Technology Co., Limited | CR No. 2830142 | support@aoxiic.com
IRF630
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRF630

Harris Corporation
IRF630
MOSFET N-CH 200V 9A TO220AB
TO-220-3
Active
IRF630
Payment Methods: paypal visa mastercard westernunion unionpay
Shipping Methods: DHL TNT FEDEX UPS SF
IRF630 Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)-
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-
Package / CaseTO-220-3
Power Dissipation (Max)-
Qualification-
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-
Vgs(th) (Max) @ Id4V @ 250µA
Price Available
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $0.42
Total Price: $0.42
This price is for reference only, please contact us for now price support@aoxiic.com.
Quick Inquiry
100,000+
Total Number Of Customers
3,000,000+
Stock Inventory
1200+
Worldwide Manufacturers
500,000+
Locally Available Stock