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HTNFET-D
Honeywell Aerospace
HTNFET-D
MOSFET N-CH 55V 8CDIP
8-CDIP Exposed Pad
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HTNFET-D Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V | |
| Mounting Type | Through Hole | |
| Operating Temperature | -55°C ~ 225°C (TJ) | |
| Package / Case | 8-CDIP Exposed Pad | |
| Power Dissipation (Max) | 50W (Tj) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V | |
| Series | HTMOS™ | |
| Supplier Device Package | 8-CDIP-EP | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
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