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IV1Q12160T4
Inventchip
IV1Q12160T4
SIC MOSFET, 1200V 160MOHM, TO-24
TO-247-4
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IV1Q12160T4 Attributes (17)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 800 V | |
| Mounting Type | Through Hole | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Package / Case | TO-247-4 | |
| Power Dissipation (Max) | 138W (Tc) | |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V | |
| Series | - | |
| Supplier Device Package | TO-247-4 | |
| Technology | SiCFET (Silicon Carbide) | |
| Vgs (Max) | +20V, -5V | |
| Vgs(th) (Max) @ Id | 2.9V @ 1.9mA |
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Unit Price: $8.83
Total Price: $8.83
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