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NP82N04MDG-S18-AY
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NP82N04MDG-S18-AY

NEC Corporation
NP82N04MDG-S18-AY
MOSFET N-CH 40V 82A TO220-3
TO-220-3
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NP82N04MDG-S18-AY Attributes (17)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)-
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
Package / CaseTO-220-3
Power Dissipation (Max)1.8W (Ta), 143W (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 41A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-
Vgs(th) (Max) @ Id2.5V @ 250µA
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