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PXN020-100QSJ
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PXN020-100QSJ

Nexperia USA Inc.
PXN020-100QSJ
N-CHANNEL 100 V, 20 MOHM, STANDA
8-PowerVDFN
Active
PXN020-100QSJ
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PXN020-100QSJ Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C31A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)-
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds-
Mounting TypeSurface Mount
Operating Temperature-
Package / Case8-PowerVDFN
Power Dissipation (Max)37W
Qualification-
Rds On (Max) @ Id, Vgs-
Series-
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-
Vgs(th) (Max) @ Id-
Price Available
rhos iso9001 iso13485 iso14001 iso45001
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Unit Price: $0.08
Total Price: $0.08
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