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2SK536-TB-E
Sanyo
2SK536-TB-E
N-CHANNEL ENHANCEMENT MOS SILICO
TO-236-3, SC-59, SOT-23-3
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2SK536-TB-E Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drain to Source Voltage (Vdss) | 50 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 10 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | 125°C (TJ) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power Dissipation (Max) | 200mW (Ta) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 10mA, 10V | |
| Series | - | |
| Supplier Device Package | 3-CP | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±12V | |
| Vgs(th) (Max) @ Id | - |
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