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SI7615BDN-T1-GE3
Vishay Siliconix
SI7615BDN-T1-GE3
MOSFET P-CH 20V 29A/104A PPAK
PowerPAK® 1212-8
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SI7615BDN-T1-GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 104A (Tc) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| FET Feature | - | |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 4890 pF @ 10 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | PowerPAK® 1212-8 | |
| Power Dissipation (Max) | 5.2W (Ta), 66W (Tc) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V | |
| Series | - | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±12V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
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