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SIA462DJ-T4-GE3
Vishay Siliconix
SIA462DJ-T4-GE3
MOSFET N-CH 30V 12A/12A PPAK
PowerPAK® SC-70-6
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SIA462DJ-T4-GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 12A (Tc) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 15 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | PowerPAK® SC-70-6 | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V | |
| Series | TrenchFET® | |
| Supplier Device Package | PowerPAK® SC-70-6 | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±20V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
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