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SIRA90ADP-T1-GE3
Vishay Siliconix
SIRA90ADP-T1-GE3
MOSFET N-CH 30V 71A/334A PPAK
PowerPAK® SO-8
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SIRA90ADP-T1-GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 71A (Ta), 334A (Tc) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 9120 pF @ 15 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | PowerPAK® SO-8 | |
| Power Dissipation (Max) | 6.3W (Ta), 104W (Tc) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 0.78mOhm @ 20A, 10V | |
| Series | TrenchFET® | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | +20V, -16V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
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