Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQS423ENW-T1_GE3
Vishay Siliconix
SQS423ENW-T1_GE3
MOSFET P-CH 30V 16A PPAK 1212-8W
PowerPAK® 1212-8W
Active
Payment Methods:
Shipping Methods:
SQS423ENW-T1_GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| FET Feature | - | |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | |
| Grade | Automotive | |
| Input Capacitance (Ciss) (Max) @ Vds | 1975 pF @ 15 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Package / Case | PowerPAK® 1212-8W | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Qualification | AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 12A, 10V | |
| Series | TrenchFET® | |
| Supplier Device Package | PowerPAK® 1212-8W | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±20V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Request Quote
Minimum: 1
Availability: RFQ
Quote: Request
This item is quoted based on live sourcing conditions. Please contact us for current price, stock, date code, MOQ, and lead time support@aoxiic.com.
Quick Inquiry
Copyright © 2020-2026, AoXi Technology Co., Limited All Rights Reserved.
