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WNSC5D04650X6Q
WeEn Semiconductors
WNSC5D04650X6Q
DIODE SIL CARBIDE 650V 4A TO220F
TO-220-2
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WNSC5D04650X6Q Attributes (15)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Capacitance @ Vr, F | 138pF @ 1V, 1MHz | |
| Current - Average Rectified (Io) | 4A | |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V | |
| Grade | - | |
| Mounting Type | Through Hole | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Package / Case | TO-220-2 | |
| Qualification | - | |
| Reverse Recovery Time (trr) | 0 ns | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Supplier Device Package | TO-220AC | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
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