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WNSC5D10650T6J
WeEn Semiconductors
WNSC5D10650T6J
DIODE SIL CARBIDE 650V 10A 5DFN
4-VSFN Exposed Pad
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WNSC5D10650T6J Attributes (15)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Capacitance @ Vr, F | 323pF @ 1V, 1MHz | |
| Current - Average Rectified (Io) | 10A | |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
| Grade | - | |
| Mounting Type | Surface Mount | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Package / Case | 4-VSFN Exposed Pad | |
| Qualification | - | |
| Reverse Recovery Time (trr) | 0 ns | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Supplier Device Package | 5-DFN (8x8) | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
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