2SK536-TB-E

N-CHANNEL ENHANCEMENT MOS SILICO

Manufacturer: Sanyo
Manufacturer Product Number: 2SK536-TB-E
Package: TO-236-3, SC-59, SOT-23-3
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 50 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: –
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 200mW (Ta)
Qualification: –
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 10V
Series: –
Supplier Device Package: 3-CP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: –