ALD110908APAL
$3.45
MOSFET 2N-CH 10.6V 8DIP
MOSFET 2N-CH 10.6V 8DIP
Manufacturer: Advanced Linear Devices Inc.
Manufacturer Product Number: ALD110908APAL
Package: 8-DIP (0.300″, 7.62mm)
Product Status: Active
Attributes:
Configuration: 2 N-Channel (Dual) Matched Pair
Current – Continuous Drain (Id) @ 25°C: 12mA, 3mA
Drain to Source Voltage (Vdss): 10.6V
FET Feature: –
Gate Charge (Qg) (Max) @ Vgs: –
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TJ)
Package / Case: 8-DIP (0.300″, 7.62mm)
Power – Max: 500mW
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Series: EPAD®
Supplier Device Package: 8-PDIP
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 810mV @ 1µA
| Configuration | 2 N-Channel (Dual) Matched Pair |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12mA, 3mA |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Feature | – |
| Gate Charge (Qg) (Max) @ Vgs | – |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V |
| Mounting Type | Through Hole |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Power - Max | 500mW |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 4.8V |
| Series | EPAD® |
| Supplier Device Package | 8-PDIP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 810mV @ 1µA |
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