AUIRF7799L2TR
$2.19
MOSFET N-CH 250V 375A DIRECTFT
MOSFET N-CH 250V 375A DIRECTFT
Manufacturer: International Rectifier
Manufacturer Product Number: AUIRF7799L2TR
Package: DirectFET™ Isometric L8
Product Status: Active
Attributes:
Current – Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 6714 pF @ 25 V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: DirectFET™ Isometric L8
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Qualification: –
Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
Series: HEXFET®
Supplier Device Package: DirectFET™ Isometric L8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
|---|---|
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | – |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Grade | – |
| Input Capacitance (Ciss) (Max) @ Vds | 6714 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | DirectFET™ Isometric L8 |
| Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) |
| Qualification | – |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 21A, 10V |
| Series | HEXFET® |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
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