EPC2012

GANFET N-CH 200V 3A DIE

Manufacturer: EPC
Manufacturer Product Number: EPC2012
Package: Die
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 100 V
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: Die
Power Dissipation (Max): –
Qualification: –
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
Series: eGaN®
Supplier Device Package: Die
Technology: GaNFET (Gallium Nitride)
Vgs (Max): +6V, -5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA