GPI65010DF56

GANFET N-CH 650V 10A DFN 5X6

Manufacturer: GaNPower
Manufacturer Product Number: GPI65010DF56
Package: Die
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 6V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: Die
Power Dissipation (Max): –
Rds On (Max) @ Id, Vgs: –
Series: –
Supplier Device Package: Die
Technology: GaNFET (Gallium Nitride)
Vgs (Max): +7.5V, -12V
Vgs(th) (Max) @ Id: 1.4V @ 3.5mA