GPIHV10DK

GaNFET N-CH 1200V 10A TO252

Manufacturer: GaNPower
Manufacturer Product Number: GPIHV10DK
Package: –
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 6V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 700 V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: –
Power Dissipation (Max): –
Qualification: –
Rds On (Max) @ Id, Vgs: –
Series: –
Supplier Device Package: –
Technology: GaNFET (Gallium Nitride)
Vgs (Max): +7.5V, -12V
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA