GPIRGIC15DFV

Power IC based on Power GaN HEMT

Manufacturer: GaNPower
Manufacturer Product Number: GPIRGIC15DFV
Package: 8-WDFN Exposed Pad
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 8V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: –
Input Capacitance (Ciss) (Max) @ Vds: –
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-WDFN Exposed Pad
Power Dissipation (Max): –
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Series: –
Supplier Device Package: 8-DFN (8×8)
Technology: GaNFET (Gallium Nitride)
Vgs (Max): –
Vgs(th) (Max) @ Id: –