HTNFET-T

MOSFET N-CH 55V 4POWER TAB

Manufacturer: Honeywell Aerospace
Manufacturer Product Number: HTNFET-T
Package: 4-SIP
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: –
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 28 V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 225°C (TJ)
Package / Case: 4-SIP
Power Dissipation (Max): 50W (Tj)
Qualification: –
Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V
Series: HTMOS™
Supplier Device Package: 4-Power Tab
Technology: MOSFET (Metal Oxide)
Vgs (Max): 10V
Vgs(th) (Max) @ Id: 2.4V @ 100µA