IV1D12010T2

DIODE SIL CARB 1.2KV 30A TO247-2

Manufacturer: Inventchip
Manufacturer Product Number: IV1D12010T2
Package: TO-247-2
Product Status: Active

Attributes:
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Current – Average Rectified (Io): 30A
Current – Reverse Leakage @ Vr: 50 µA @ 1200 V
Mounting Type: Through Hole
Operating Temperature – Junction: -55°C ~ 175°C
Package / Case: TO-247-2
Reverse Recovery Time (trr): 0 ns
Series: –
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: TO-247-2
Technology: SiC (Silicon Carbide) Schottky
Voltage – DC Reverse (Vr) (Max): 1200 V
Voltage – Forward (Vf) (Max) @ If: 1.8 V @ 10 A