IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Manufacturer: Inventchip
Manufacturer Product Number: IV1Q12160T4
Package: TO-247-4
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 800 V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 20V
Series: –
Supplier Device Package: TO-247-4
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +20V, -5V
Vgs(th) (Max) @ Id: 2.9V @ 1.9mA