NXPSC04650DJ

DIODE SIL CARBIDE 650V 4A DPAK

Manufacturer: WeEn Semiconductors
Manufacturer Product Number: NXPSC04650DJ
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status: Active

Attributes:
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current – Average Rectified (Io): 4A
Current – Reverse Leakage @ Vr: 170 µA @ 650 V
Grade: –
Mounting Type: Surface Mount
Operating Temperature – Junction: 175°C (Max)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification: –
Reverse Recovery Time (trr): 0 ns
Series: –
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: DPAK
Technology: SiC (Silicon Carbide) Schottky
Voltage – DC Reverse (Vr) (Max): 650 V
Voltage – Forward (Vf) (Max) @ If: 1.7 V @ 4 A