RFD16N05LSM

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer Product Number: RFD16N05LSM
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 50 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: –
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 60W (Tc)
Qualification: –
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Series: –
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250mA