SIHF530-GE3

MOSFET N-CH 100V 14A TO220AB

Manufacturer: Vishay Siliconix
Manufacturer Product Number: SIHF530-GE3
Package: TO-220-3
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Power Dissipation (Max): 88W (Tc)
Qualification: –
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Series: –
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA