SQ2310CES-T1_GE3

MOSFET N-CH 20V 6A TO236

Manufacturer: Vishay Siliconix
Manufacturer Product Number: SQ2310CES-T1_GE3
Package: TO-236-3, SC-59, SOT-23-3
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 2W (Tc)
Qualification: –
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Series: Automotive, AEC-Q101, TrenchFET®
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA