DIODE SIL CARBIDE 650V 6A DPAK
Manufacturer: WeEn Semiconductors
Manufacturer Product Number: WNSC5D06650D6J
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status: Active
Attributes:
Capacitance @ Vr, F: 201pF @ 1V, 1MHz
Current – Average Rectified (Io): 6A
Current – Reverse Leakage @ Vr: 30 µA @ 650 V
Grade: –
Mounting Type: Surface Mount
Operating Temperature – Junction: -55°C ~ 175°C
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification: –
Reverse Recovery Time (trr): 0 ns
Series: –
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: DPAK
Technology: SiC (Silicon Carbide) Schottky
Voltage – DC Reverse (Vr) (Max): 650 V
Voltage – Forward (Vf) (Max) @ If: 1.7 V @ 6 A


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