EPC2102ENGRT
GANFET 2N-CH 60V 23A DIE
GANFET 2N-CH 60V 23A DIE
Manufacturer: EPC
Manufacturer Product Number: EPC2102ENGRT
Package: Die
Product Status: Active
Attributes:
Configuration: 2 N-Channel (Half Bridge)
Current – Continuous Drain (Id) @ 25°C: 23A (Tj)
Drain to Source Voltage (Vdss): 60V
FET Feature: –
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: Die
Power – Max: –
Qualification: –
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Series: eGaN®
Supplier Device Package: Die
Technology: GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id: 2.5V @ 7mA
| Configuration | 2 N-Channel (Half Bridge) |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23A (Tj) |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | – |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| Grade | – |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Die |
| Power - Max | – |
| Qualification | – |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V |
| Series | eGaN® |
| Supplier Device Package | Die |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
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