EPC2105ENGRT

GANFET 2N-CH 80V 9.5A DIE

Manufacturer: EPC
Manufacturer Product Number: EPC2105ENGRT
Package: Die
Product Status: Active

Attributes:
Configuration: 2 N-Channel (Half Bridge)
Current – Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 80V
FET Feature: –
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: Die
Power – Max: –
Qualification: –
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V
Series: eGaN®
Supplier Device Package: Die
Technology: GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA