GE12050EEA3
$1,583.19
1200V 475A 6-Pack SiC Module
1200V 475A 6-Pack SiC Module
Manufacturer: GE Aerospace
Manufacturer Product Number: GE12050EEA3
Package: Module
Product Status: Active
Attributes:
Configuration: 6 N-Channel (3-Phase Bridge)
Current – Continuous Drain (Id) @ 25°C: 475A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: –
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (Tc)
Package / Case: Module
Power – Max: 1250W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Series: SiC Power
Supplier Device Package: –
Technology: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.5V @ 160mA
| Configuration | 6 N-Channel (3-Phase Bridge) |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 475A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | – |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Package / Case | Module |
| Power - Max | 1250W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
| Series | SiC Power |
| Supplier Device Package | – |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
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