GE12160CEA3
$1,583.19
1200V 1425A SiC Half-Bridge
1200V 1425A SiC Half-Bridge
Manufacturer: GE Aerospace
Manufacturer Product Number: GE12160CEA3
Package: –
Product Status: Active
Attributes:
Current – Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Mfr: GE Aerospace
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Package: Bulk
Package / Case: Module
Power – Max: 3.75kW (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Series: Automotive, AEC-Q101
Supplier Device Package: –
Vgs(th) (Max) @ Id: 4.5V @ 480mA
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
|---|---|
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Mfr | GE Aerospace |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Package | Bulk |
| Package / Case | Module |
| Power - Max | 3.75kW (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
| Series | Automotive, AEC-Q101 |
| Supplier Device Package | – |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
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