HUF76629D3S

MOSFET N-CH 100V 20A TO252AA

Manufacturer: Harris Corporation
Manufacturer Product Number: HUF76629D3S
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status: Active

Attributes:
Current – Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 110W (Tc)
Qualification: –
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Series: UltraFET™
Supplier Device Package: TO-252, (D-Pak)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 3V @ 250µA