MOSFET N-CH 200V 9A TO220AB
Manufacturer: Harris Corporation
Manufacturer Product Number: IRF630
Package: TO-220-3
Product Status: Active
Attributes:
Current – Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): –
FET Feature: –
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Grade: –
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Mounting Type: Through Hole
Operating Temperature: –
Package / Case: TO-220-3
Power Dissipation (Max): –
Qualification: –
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Series: –
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): –
Vgs(th) (Max) @ Id: 4V @ 250µA


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