WNSC5D08650T6J

DIODE SIL CARBIDE 650V 8A 5DFN

Manufacturer: WeEn Semiconductors
Manufacturer Product Number: WNSC5D08650T6J
Package: 4-VSFN Exposed Pad
Product Status: Active

Attributes:
Capacitance @ Vr, F: 267pF @ 1V, 1MHz
Current – Average Rectified (Io): 8A
Current – Reverse Leakage @ Vr: 40 µA @ 650 V
Grade: –
Mounting Type: Surface Mount
Operating Temperature – Junction: -55°C ~ 175°C
Package / Case: 4-VSFN Exposed Pad
Qualification: –
Reverse Recovery Time (trr): 0 ns
Series: –
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: 5-DFN (8×8)
Technology: SiC (Silicon Carbide) Schottky
Voltage – DC Reverse (Vr) (Max): 650 V
Voltage – Forward (Vf) (Max) @ If: 1.7 V @ 8 A