WNSC5D08650X6Q

DIODE SIL CARBIDE 650V 8A TO220F

Manufacturer: WeEn Semiconductors
Manufacturer Product Number: WNSC5D08650X6Q
Package: TO-220-2
Product Status: Active

Attributes:
Capacitance @ Vr, F: 267pF @ 1V, 1MHz
Current – Average Rectified (Io): 8A
Current – Reverse Leakage @ Vr: 40 µA @ 650 V
Grade: –
Mounting Type: Through Hole
Operating Temperature – Junction: -55°C ~ 175°C
Package / Case: TO-220-2
Qualification: –
Reverse Recovery Time (trr): 0 ns
Series: –
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: TO-220AC
Technology: SiC (Silicon Carbide) Schottky
Voltage – DC Reverse (Vr) (Max): 650 V
Voltage – Forward (Vf) (Max) @ If: 1.7 V @ 8 A